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IHW30N160R2. H30R1602 Datasheet

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IHW30N160R2. H30R1602 Datasheet
















H30R1602 IHW30N160R2. Datasheet pdf. Equivalent













Part

H30R1602

Description

IHW30N160R2



Feature


IHW30N160R2 Soft Switching Series Trenc hStop® Reverse Conducting (RC-)IGBT wi th monolithic body diode Features: Powerful monolithic Body Diode with v ery low forward voltage • Body diode clamps negative voltages • Trench a nd Fieldstop technology for 1600 V appl ications offers : - very tight paramete r distribution G - high ruggedness, t emperature stable behavio.
Manufacture

Infineon

Datasheet
Download H30R1602 Datasheet


Infineon H30R1602

H30R1602; r • NPT technology offers easy parall el switching capability due to positive temperature coefficient in VCE(sat) Low EMI • Qualified according to JE DEC1 for target applications PG-TO-247 -3 • Pb-free lead plating; RoHS comp liant • Complete product spectrum an d PSpice Models : http://www.infineon.c om/igbt/ Applications: • Inductive C ooking • Soft Switching Applic.


Infineon H30R1602

ations C E Type VCE IC VCE(sat),Tj= 25°C Tj,max Marking Package IHW30N 160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3 Maximum Ratings Paramete r Symbol Value Unit Collector-emitt er voltage DC collector current TC = 25 °C TC = 100°C Pulsed collector curren t, tp limited by Tjmax Turn off safe op erating area (VCE ≤ 1600V, Tj ≤ 175 °C) Diode forward current .


Infineon H30R1602

TC = 25°C TC = 100°C Diode pulsed curr ent, tp limited by Tjmax Diode surge no n repetitive current, tp limited by Tjm ax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwa ve TC = 100°C, tp ≤ 2.5µs, sine hal fwave Gate-emitter voltage Transient Ga te-emitter voltage (tp < 10 µs, D < 0. 01) Power dissipation TC = 25°C Operat ing junction temperature Storag.





Part

H30R1602

Description

IHW30N160R2



Feature


IHW30N160R2 Soft Switching Series Trenc hStop® Reverse Conducting (RC-)IGBT wi th monolithic body diode Features: Powerful monolithic Body Diode with v ery low forward voltage • Body diode clamps negative voltages • Trench a nd Fieldstop technology for 1600 V appl ications offers : - very tight paramete r distribution G - high ruggedness, t emperature stable behavio.
Manufacture

Infineon

Datasheet
Download H30R1602 Datasheet




 H30R1602
IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
G
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1600V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
60
30
90
90
60
30
90
50
130
120
±20
±25
312
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov 09




 H30R1602
IHW30N160R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.48
0.48
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=500µA
VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
Tj=175°C
VGE=0V, IF=30A
Tj=25°C
Tj=150°C
Tj=175°C
IC=0.75mA,
VCE=VGE
VCE=1600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
1600
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.8
2.25
2.35
1.65
2.0
2.0
5.8
-
-
-
22.5
none
Unit
max.
-
2.1
-
-
V
2.0
-
-
6.4
5
2500
100
-
µA
nA
S
Power Semiconductors
2
Rev. 2.1 Nov 09




 H30R1602
IHW30N160R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=1280V,
IC=30A;VGE=15V
- 2740 -
- 68.1 - pF
- 58.7 -
- 94 - nC
- 13 - nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=30A
VGE=0 /15V,
RG=10
min.
-
-
-
-
-
Value
typ.
max. Unit
525 -
38.3
- ns
--
2.53
2.53
- mJ
-
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,IC=30A,
VGE= 0 /15V,
RG= 10
min.
-
-
-
-
-
Value
Typ.
564
111
-
4.37
4.37
Unit
max.
-
- ns
-
- mJ
-
Power Semiconductors
3
Rev. 2.1 Nov 09




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