FGH30N120FTD

FGH30N120FTD 1200V, 30A Trench IGBT FGH30N120FTD 1200V, 30A Trench IGBT Features Field stop trench technology High speed switching Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A High input impedance RoHS compliant Applications Induction heating and Microwave oven Soft switching applications E C G November 2008 tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient G E Ratings 1200 ± 25 60 30 90 30 339 132 -55 to +150 -55 to +150 300 Typ. - Max. 0.38 1.2 40 Units V V A A ...