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DSA90C200HB Dataheets PDF



Part Number DSA90C200HB
Manufacturers IXYS
Logo IXYS
Description Schottky Diode
Datasheet DSA90C200HB DatasheetDSA90C200HB Datasheet (PDF)

Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA90C200HB 1 2 3 DSA90C200HB VRRM I FAV VF = 200 V = 2x 45 A = 0.86 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free whe.

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Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA90C200HB 1 2 3 DSA90C200HB VRRM I FAV VF = 200 V = 2x 45 A = 0.86 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Schottky Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 200 V VR = 200 V IF = 45 A IF = 90 A IF = 45 A IF = 90 A TC = 145°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance t = 10 ms; (50 Hz), sine; VR = 0 V VR = 24 V f = 1 MHz TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125 °C TVJ = 175°C Ratings min. typ. max. Unit 200 V 200 V 900 µA 5 mA 0.96 V 1.18 V 0.86 V 1.14 V 45 A TVJ = 175°C TC = TVJ = TVJ = 25°C 45°C 25°C 0.52 V 6.5 mΩ 0.55 K/W 0.25 K/W 275 W 820 A 261 pF IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 Conditions per terminal 1) DSA90C200HB Ratings min. typ. max. Unit 70 A -55 175 °C -55 150 °C -55 150 °C 6 g 0.8 1.2 Nm 20 120 N Part description D = Diode S = Schottky Diode A = low VF 90 = Current Rating [A] C = Common Cathode 200 = Reverse Voltage [V] HB = TO-247AD (3) Ordering Standard Ordering Number DSA90C200HB Marking on Product DSA90C200HB Delivery Mode Tube Quantity Code No. 30 502854 Equivalent Circuits for Simulation I V0 R0 Schottky V 0 max R0 max threshold voltage slope resistance * 0.52 3.9 * on die level T VJ = 175°C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Schottky 100 IF 10 [A] TVJ = 150°C 125°C 25°C 10.000 TVJ = 175°C 1.000 150°C 125°C IR 0.100 100°C [mA] 75°C 0.010 50°C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF [V] Fig. 1 Max. forward voltage drop characteristics 25°C 0.001 0 40 80 120 160 200 VR [V] Fig. 2 Typ. reverse current IR vs. rev: voltage VR 100 100 1000 CT [pF] TVJ= 25°C 100 70 0 50 100 150 200 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 80 60 IF(AV) 40 [A] 20 DC d = 0.5 0 0 40 80 120 160 TC [°C] Fig. 4 Avg. forward current IF(AV) vs. case temp. TC 80 P(AV) 60 [W] 40 20 d= DC 0.5 0.33 0.25 0.17 0.08 0 0 10 20 30 40 50 60 70 80 90 IF(AV) [A] Fig. 5 Forward power loss characteristics 1 ZthJC [K/W] D = 0.5 0.33 0.25 0.17 0.08 0.1 .


TLE4317 DSA90C200HB L16B06


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