Document
Schottky Diode
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode
Part number
DSA90C200HB
1
2
3
DSA90C200HB
VRRM I FAV VF
= 200 V = 2x 45 A = 0.86 V
Backside: cathode
Features / Advantages:
● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced
protection circuits ● Low noise switching
Applications:
● Rectifiers in switch mode power supplies (SMPS)
● Free wheeling diode in low voltage converters
Package: TO-247
● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309e
DSA90C200HB
Schottky
Symbol VRSM VRRM IR VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current forward voltage drop
average forward current
VR = 200 V VR = 200 V IF = 45 A IF = 90 A IF = 45 A IF = 90 A TC = 145°C rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 24 V f = 1 MHz
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 125 °C
TVJ = 175°C
Ratings
min. typ. max. Unit 200 V 200 V 900 µA 5 mA 0.96 V 1.18 V 0.86 V 1.14 V 45 A
TVJ = 175°C
TC = TVJ = TVJ =
25°C 45°C 25°C
0.52 V
6.5 mΩ
0.55 K/W
0.25
K/W
275 W
820 A
261
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309e
Package TO-247
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
MD
mounting torque
F C
mounting force with clip
Product Marking
Logo Part Number
Date Code
Lot# Location
IXYS
XXXXXXXXX yywwZ 1234
Conditions
per terminal 1)
DSA90C200HB
Ratings
min. typ. max. Unit 70 A
-55
175 °C
-55
150 °C
-55
150 °C
6
g
0.8
1.2 Nm
20
120 N
Part description
D = Diode S = Schottky Diode A = low VF 90 = Current Rating [A] C = Common Cathode 200 = Reverse Voltage [V] HB = TO-247AD (3)
Ordering Standard
Ordering Number DSA90C200HB
Marking on Product DSA90C200HB
Delivery Mode Tube
Quantity Code No.
30
502854
Equivalent Circuits for Simulation
I V0
R0
Schottky
V 0 max R0 max
threshold voltage slope resistance *
0.52 3.9
* on die level
T VJ = 175°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309e
DSA90C200HB
Outlines TO-247
E
Q
A A2
ØP
S
D 2x E2
123
L1
L
2x b2 b4 2x e
3x b
C
A1
Ø P1 D2
D1
4
E1
Sym.
A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1
Inches
min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216
0.215 BSC 0.780 0.800
- 0.177 0.140 0.144 0.212 0.244
0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 -
- 0.29
Millimeter
min. max.
4.70 5.30
2.21 2.59
1.50 2.49
20.79 21.45
15.48 16.24
4.31 5.48
5.46 BSC
19.80 20.30
- 4.49
3.55 3.65
5.38 6.19
6.14 BSC
0.99 1.40
1.65 2.39
2.59 3.43
0.38 0.89
13.07 -
0.51 1.35
13.45
-
- 7.39
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309e
DSA90C200HB
Schottky
100
IF 10
[A]
TVJ =
150°C 125°C
25°C
10.000
TVJ = 175°C 1.000 150°C
125°C
IR 0.100 100°C
[mA]
75°C 0.010
50°C
1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
Fig. 1 Max. forward voltage drop characteristics
25°C 0.001
0 40
80 120 160 200
VR [V]
Fig. 2 Typ. reverse current IR vs. rev: voltage VR
100
100
1000
CT [pF]
TVJ= 25°C
100
70
0
50 100 150 200
VR [V]
Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR
80
60 IF(AV)
40 [A]
20
DC d = 0.5
0 0 40 80 120 160 TC [°C]
Fig. 4 Avg. forward current IF(AV) vs. case temp. TC
80
P(AV) 60 [W] 40
20
d= DC 0.5 0.33 0.25 0.17 0.08
0 0 10 20 30 40 50 60 70 80 90 IF(AV) [A]
Fig. 5 Forward power loss characteristics
1
ZthJC [K/W]
D = 0.5
0.33 0.25 0.17
0.08
0.1
.