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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK4092
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A) Low gate charge
QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A) Gate voltage rating: ±30 V Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4092-A Note
LEAD PLATING Sn-Ag-Cu
PACKING 100 p/package
PACKAGE TO-3P (MP-88) typ. 5.0 g
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
600 ±30 ±21 ±60 200
3 150 −55 to +150 21 29.4
V V A A W W °C °C A mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-3P)
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