3135GN-280LV

3135GN-280LV 280 Watts 50 Volts 200  s, 20% S-Band Radar 3100 - 3500 MHz GENERAL DESCRIPTION The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200  S pulse width, 20% duty factor across the 3100 to 3500 MHz band. This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application – High Power S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 616 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 125 V -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C CASE OUTLINE 55-KP Common Source ELECTRICAL CHARACTERISTICS @ 25C Symbol Characteristics Test Conditions1 Min Typ Max Units Pout Output Power Pin=14.1W, Freq=3100,3300,3500 MHz 280 330 W Gp Power Gain Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7 dB D Drain Efficiency Dr Droop Pin=14.1W, Freq=3100,3300,3500 MHz Pin=14.1W, Freq=3100,3300,3500 MHz 50 58 0.2 0.5 % dB VSWR-T Өjc Load Mismatch Tolerance Pin=14.1W, Freq=3100 MHz 3:1 Thermal Resistance Pulse Width=200  S, Duty=20% .39 1 Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical) °C/W FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) Drain leakage current VgS ...