1214GN-400LV

1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 800 W Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG)-55 to +125 C Operating Junction Temperature +250 C CASE OUTLINE 55-KR Common Source ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T Өjc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=400W, Freq=1200, 1300, 1400 MHz Pout=400W, Freq=1200, 1300, 1400 MHz Pout=400W, Freq=1200, 1300, 1400 MHz Pout=400W, Freq=1200, 1300, 1400 MHz Pout=400W, Freq=1200 MHz Pulse Width=4.5mS, Duty=30% Min Typ Max Units 400 W 16 16.8 dB 60 68 % 0.6 dB 3:1 0.3 °C/W  Bias Condition: Vdd=+50V, Idq=200mA average current (Vgs= -2.0 ~ -4.5V ) with constant gate Bias FUNCTIONAL CHARACTERISTICS...