M29W640GH

M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns ■ Fast Program commands – 2 Words/4 Bytes Program (without VPP=12V) – 4 Words/8 Bytes Program (with VPP=12V) – 16 Word/32 Byte Write Buffer ■ Programming time – 10 µs per Byte/Word typical – Chip Program time: 10s (using 4 Words Program) ■ Memory organization – M29W640GH/L: 128 Main Blocks, 64 KBytes each – M29W640GT/B Eight 8 KBytes Boot Blocks (top or bottom location) 127 Main Blocks, 64 KBytes each ■ Program/Erase controller – Embedded Byte/Word Program algorithms ■ Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ VPP/WP pin for Fast Program and Write Protect ■ Temporary Block Unprotection mode FBGA TSOP48 (NA) 12 x 20mm TFBGA48 (ZA) 6 x 8mm FBGA TSOP56 (NB) 14 x 20mm(1) TBGA64 (ZF) 10 x 13mm(1) 1. Packages only available upon request. ■ Common Flash Interface – 64-bit Security Code ■ 128 Word Extended Memory Block – Extra block used as security block or to store additional information ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per block ■ ECOPACK® package...