P2003BVG

P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 9A SOP-8 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 32 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W REV 1.1 1 2015/11/11 P2003BVG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V 30 1 32 1.7 2.5 V ±100 nA 1 mA 10 A Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 6A VGS = 10V, ID = 8A VDS = 15V, ID = 8A 26 31 18.4 20 16 mΩ S DYNAMIC Input Capacitance Output...