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2SK2140-Z Dataheets PDF



Part Number 2SK2140-Z
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet 2SK2140-Z Datasheet2SK2140-Z Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 .

  2SK2140-Z   2SK2140-Z


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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±7.0 A Drain Current (pulse)* ID(pulse) ±28 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Channel Temperature Tch 150 ˚C Single Avalanche Current** IAS 7.0 A Single Avalanche Energy** EAS 16.3 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 10.0 1.3 ± 0.2 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. 4 1 23 1.3 ± 0.2 0.5 ± 0.2 0.75 ± 0.1 2.54 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.0 ± 0.5 1.5 MAX. 1.0 ± 0.3 1.4 ± 0.2 (2.54) (2.54) (0.5(0R.)8R) 0.5 ± 0.2 1.1 ± 0.4 3.0 ± 0.5 123 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.8 ± 0.2 MP-25Z (SURFACE MOUNT TYPE) Drain Gate Body Diode Source Document No. TC-2513 (O. D. No. TC-8072) Date Published February 1995 P Printed in Japan © 1995 2SK2140, 2SK2140-Z ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. 2.5 1.5 TYP. 1.1 930 200 40 20 12 60 12 30 6.0 15 1.0 400 2.0 MAX. 1.5 3.5 100 ±100 UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns µC TEST CONDITIONS VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 3.5 A, RG = 10 Ω RL = 42.9 Ω VGS = 10 V ID = 7.0 V VDD = 450 V IF = 7.0 A, VGS = 0 IF = 7.0 A di/dt = 50 A/µs Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD ID VDD IAS BVDSS VDS Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD Test Circuit 2 Switching Time D.U.T. PG. RG RG = 10 Ω VGS 0 t t = 1 us Duty Cycle ≤ 1 % RL VGS VGS Wave Form 0 10 % VDD ID VGS (on) 90 % ID Wave Form 0 10 % td (on) ID t tr d (off) 90 % 90 % 10 % tf t ton off The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 dT - Percentage of Rated Current - % TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 ID - Drain Current - A 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 10 1.0 RDS (ON) TC = 25 = 20 LimitedID(a(tDVC)GPSower ˚C V) ID (pulse) PW = 100 s Dissipatio1nmLismited 10 µ µ s Single Pulse 0.1 1 10 100 1 000 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 TC = –25 ˚C 25 ˚C 75 ˚C 10 125 ˚C VDS = 10 V Pulsed ID - Drain Current - A 1 0.1 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A PT - Total Power Dissipation - W 2SK2140, 2SK2140-Z TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 60 40 20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10 10 V VGS = 20 V 8V 6V 5 0 5 10 VDS - Drain to Source Voltage - V 3 | yfs | - Forward Transfer Admittance - S 2SK2140, 2SK2140-Z rth (ch-c) (t) - Transient Thermal Resistance - ˚C/W 1 000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a) = 83.3 ˚C/W 10 Rth (ch-c) = 1.67 ˚C/W 1 0.1 0.01 0.001 10 µ 100 µ 1 m 10 m 100 m 1 PW - Pulse Width - s TC = 25 ˚C Single Pulse 10 100 1 000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 Tch = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 2.0 ID = 7 A 3.5 A 0.7 A 1.0 RDS (on) - Drain to Source On-State Resistance - Ω VDS = 10 V Pulsed 0.1 1.0 ID - Drain Current - A 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 4.0 VGS = 10 V 2.0 20 V 1.0 10 100 ID - Drain Current - A VGS (off) - Gate to Source Cutoff Voltage - V 0 4 8 12 16 20 VGS - Gate to Source Voltage - (V) GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.0 2.0 1.0 VDS = 10 V 0 .


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