Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES • Low On-state Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A)
• Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 7.0 A
Single Avalanche Energy**
EAS 16.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2 10.0
1.3 ± 0.2
3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX.
4 1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1 2.54
2.8 ± 0.2
2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX. 1.3 ± 0.2
8.5 ± 0.2
1.0 ± 0.5 1.5 MAX.
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
(0.5(0R.)8R)
0.5 ± 0.2
1.1 ± 0.4 3.0 ± 0.5
123
1. Gate 2. Drain 3. Source 4. Fin (Drain)
2.8 ± 0.2
MP-25Z (SURFACE MOUNT TYPE) Drain
Gate
Body Diode
Source
Document No. TC-2513 (O. D. No. TC-8072)
Date Published February 1995 P Printed in Japan
© 1995
2SK2140, 2SK2140-Z
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
MIN.
2.5 1.5
TYP. 1.1
930 200 40 20 12 60 12 30 6.0 15 1.0 400 2.0
MAX. 1.5 3.5
100 ±100
UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns µC
TEST CONDITIONS VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 3.5 A, RG = 10 Ω RL = 42.9 Ω VGS = 10 V ID = 7.0 V VDD = 450 V IF = 7.0 A, VGS = 0 IF = 7.0 A di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
ID VDD
IAS
BVDSS VDS
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
Test Circuit 2 Switching Time
D.U.T.
PG.
RG RG = 10 Ω
VGS 0
t
t = 1 us Duty Cycle ≤ 1 %
RL VGS
VGS
Wave Form
0 10 %
VDD
ID
VGS (on) 90 %
ID
Wave Form
0 10 % td (on)
ID t tr d (off)
90 %
90 % 10 % tf
t ton off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
dT - Percentage of Rated Current - %
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
80
60
40
20
ID - Drain Current - A
0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA 100
10 1.0
RDS (ON) TC = 25
= 20 LimitedID(a(tDVC)GPSower ˚C
V) ID (pulse) PW =
100 s
Dissipatio1nmLismited
10
µ µ
s
Single Pulse 0.1
1 10
100 1 000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
TC = –25 ˚C 25 ˚C 75 ˚C
10 125 ˚C
VDS = 10 V Pulsed
ID - Drain Current - A
1
0.1 0 5 10 15 VGS - Gate to Source Voltage - V
ID - Drain Current - A
PT - Total Power Dissipation - W
2SK2140, 2SK2140-Z
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80
60
40
20
0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulsed
10 10 V
VGS = 20 V
8V
6V
5
0 5 10 VDS - Drain to Source Voltage - V
3
| yfs | - Forward Transfer Admittance - S
2SK2140, 2SK2140-Z
rth (ch-c) (t) - Transient Thermal Resistance - ˚C/W
1 000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a) = 83.3 ˚C/W
10 Rth (ch-c) = 1.67 ˚C/W
1
0.1
0.01
0.001 10 µ 100 µ 1 m 10 m 100 m
1
PW - Pulse Width - s
TC = 25 ˚C Single Pulse
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10
Tch = –25 ˚C 25 ˚C 75 ˚C
125 ˚C
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
Pulsed 2.0
ID = 7 A 3.5 A 0.7 A
1.0
RDS (on) - Drain to Source On-State Resistance - Ω
VDS = 10 V Pulsed
0.1
1.0 ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulsed
4.0
VGS = 10 V
2.0 20 V
1.0 10 100 ID - Drain Current - A
VGS (off) - Gate to Source Cutoff Voltage - V
0 4 8 12 16 20 VGS - Gate to Source Voltage - (V)
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0
3.0
2.0
1.0
VDS = 10 V 0 .