Si2351DS

P-Channel 20-V (D-S) MOSFET Si2351DS Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 - 20 0.205 at VGS = - 2.5 V - 2.2 Qg (Typ.) 3.2 nC FEATURES Halogen-free Option Available TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2351DS (G1)* * Marking Code Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free) Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) ≤5s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Limit - 20 ± 12 - 2.8 - 2.4 - 2.2b, c - 1.8b, c - 10 - 2.0 - 0.91b, c 2.1 1.5 1.0b, c 0.7b, c - 55 to 150 Maximum 115 75 Unit V A W °C Unit °C/W Document Number: 73702 S-80642-Rev. C, 24-Mar-08 www.vishay.com 1 Si2351DS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unl...