Sensing and Control
Hermetic Infrared Emitting Diode
OP230 Series
Features:
Focused and non‐focused op cal light pa ...
Sensing and Control
Hermetic Infrared Emitting Diode
OP230 Series
Features:
Focused and non‐focused op cal light pa ern Enhanced temperature range TO‐46 herme cally sealed package Mechanically and spectrally matched to other Optek devices Choice of power ranges Choice of narrow or wide irradiance pa ern
Descrip on:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emi ng diode, mounted in a herme c metal TO‐
46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same
forward current.
Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power
points. The 890 nm wavelength closely matches the spectral response of silicon photo
transistors, while the narrow beam
angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt
applica ons in conjunc on with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally
matched to OP800, OP593 and OP598 photo
transistors.
Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°) between half
power points. The 890 nm wavelength closely matches the spectral response of silicon photo‐
transistors, while the wide
beam angle provides rela vely even illumina on over a large area. The OP231W is mechanically and spectrally matched ...