2-PACK MOSFET MODULE
SEMICONDUCTOR
TECHNICAL DATA
150V / 200A 2-PACK MOSFET MODULE (Common-Drain)
FEATURES Low RDS(on) High frequency operati...
Description
SEMICONDUCTOR
TECHNICAL DATA
150V / 200A 2-PACK MOSFET MODULE (Common-Drain)
FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching
APPLICATION Battery Management System Electric Vehicle
FM200CD1D5B
INTERNAL CIRCUIT
1 2
6 7
3
5 4
1. D1D2 2. S2 3. S1
4. G1 5. S1 6. G2 7. S2
OUTLINE DRAWING
13+_ 0.3
13+_ 0.3
13+_ 0.3
14 _+ 0.3
1 23
23+_ 0.3
23+_ 0.3
80+_ 0.5 93+_ 0.5
6 7
5 4
17+_ 0.3
Unit : mm
17 _+0.3 25 _+0.3 28 _+0.5 35 _+0.5
6 _+0.5 30 _+0.5 31 _+0.5
30 _+ 0.5 22 _+ 0.5
MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC
Drain-to-Source Breakdown Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current Isolation Voltage Test
@TC=25 @TC=100 @TC=25 , Pulsed AC@1minute
Junction Temperature
Storage Temperature
Weight
Mounting Torque (M6)
Terminal Connection Torque (M5)
SYMBOL VDSS VGSS
ID
IDM VISO
Tj Tstg Weight
M M
2013. 7. 24
Revision No : 0
RATING 150 30 340 240 1300 2500
-40 +150 -40 +125
365 5 5 4
UNIT V V A A V
g Nm Nm
1/2
FM200CD1D5B
ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain to Source Leakage Current
Gate to Source Leakage Current
Drain to Source ON Resistance Dynamic
BVDSS Vth IDSS
IGSS
RDS(ON)
ID=250 , VGS=0V VDS=VGS, ID=250 VDS=150V, VGS=0V VGS=20V VGS=-20V VGS=10V, ID=200A
Total Gate Charge Gate to Source Charge Gate to Source Charge...
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