2-PACK MOSFET MODULE
SEMICONDUCTOR
TECHNICAL DATA
FM400CD1D5C
150V / 400A 2-PACK MOSFET MODULE (Common-Drain)
FEATURES Low RDS(on) High fre...
Description
SEMICONDUCTOR
TECHNICAL DATA
FM400CD1D5C
150V / 400A 2-PACK MOSFET MODULE (Common-Drain)
FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching
APPLICATION Battery Management System Electric Vehicle, Automotive etc.
INTERNAL CIRCUIT
1 2
1. S2 2. D1/D2 3. S1
4. G1 5. S1 6. G2 7. S2
6 7
3 5 4
OUTLINE DRAWING
14 +_0.3
79 +_0.3 14 +_0.3
14 +_0.3
Unit : mm
M6 3
15 _+0.3 27 _+0.3 48 _+0.5 62 _+0.5
19 _+0.3
16
7
5
2 34
28 +_0.3
28 +_0.3
93+_ 0.5
108 +_0.5
21 +_0.3
M6 4
3 _+0.5 30 _+0.5 31 _+0.5
29 _+0.5 21 _+0.5
MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC
Drain-to-Source Breakdown Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current Isolation Voltage Test
@TC=25 @TC=100 @TC=25 ; Pulsed ; AC@1minute
Junction Temperature
Storage Temperature
Weight
Mounting Torque (M6)
Terminal Connection Torque (M6)
SYMBOL VDSS VGSS
ID
IDM VISO
Tj Tstg Weight
M M
2013. 9. 13
Revision No : 0
RATING 150 30 650 450 2500 2500
-40 +150 -40 +125
365 5 6 5
UNIT V V A A V
g Nm Nm
1/3
FM400CD1D5C
ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Drain to Source ON Resistance Dynamic
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=5mA, Referenced to 25
Vth VDS=VGS, ID=250
VDS=150V, VG...
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