FM400HB1D5C

SEMICONDUCTOR TECHNICAL DATA FM400HB1D5C 150V / 400A 2 - PACK MOSFET MODULE (Half - Bridge) FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Motor control Battery management system Electric vehicle, Automotive etc. INTERNAL CIRCUIT 12 1. D2/S1 2. S2 3. D1 4. G1 5. S1 6. G2 7. S2 6 7 3 5 4 OUTLINE DRAWING 14 +_0.3 79 +_0.3 14 +_0.3 14 +_0.3 Unit : mm M6 3 15 _+0.3 27 _+0.3 48 _+0.5 62 _+0.5 19 _+0.3 16 7 5 2 34 28 +_0.3 28 +_0.3 93+_ 0.5 108 +_0.5 21 +_0.3 M6 4 3 _+0.5 30 _+0.5 31 _+0.5 29 _+0.5 21 _+0.5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Drain-to-Source Breakdown Voltage Gate to Source Voltage Continuous Drain Current Isolation Voltage Test @TC=25 @TC=100 AC@1minute Junction Temperature Storage Temperature Weight Mounting Torque (M6) Terminal Connection Torque (M6) SYMBOL VDSS VGSS IC VISO TJ Tstg Weight M M RATING 150 30 650 450 2500 -40 +150 -40 +125 360 5 6 5 UNIT V V A V g Nm Nm 2013. 6. 03 Revision No : 0 1/3 FM400HB1D5C ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain to Source Leakage Current pGate to Source Leakage Current Drain to Source ON Resistance Dynamic SYMBOL TEST CONDITION BVDSS ID=250 , VGS=0V BVDSS/ Tj ID=5mA, Referenced to 25 Vth VDS=VGS, ID=250 VDS=150V, VGS=0V IDSS VDS=150V, VGS=0V, Tj=125 ...