2-PACK MOSFET MODULE
SEMICONDUCTOR
TECHNICAL DATA
FMMT311
100V/540A 2-PACK MOSFET MODULE (Half - Bridge)
FEATURES Low RDS(on) High frequenc...
Description
SEMICONDUCTOR
TECHNICAL DATA
FMMT311
100V/540A 2-PACK MOSFET MODULE (Half - Bridge)
FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching
APPLICATION Motor Control Electric Vehicle, Automotive etc.
INTERNAL CIRCUIT
9 ±0.3 4 ±0.3
FMT02
OUTLINE DRAWING
Unit : mm
9 ±0.3 17 ±0.3
90 ±0.3
28 ±0.2
28 ±0.2
17 ±0.3
M4 X 4
24 ±0.2
M6 X 3
1
62 ±0.3 72 ±0.3
54 ±0.3
5 ±0.3 2 ±0.2
2
22 ±0.3
2 ±0.2
72 ±0.3 80 ±0.3
3
24 ±0.2
2 ±0.2
S-1 S-6 S-2 S-5 S-3 S-4
4.2 ±0.2
6.4 ±0.2
5 ±0.5 9 ±0.5
15 ±0.5
MAXIMUM RATING (@Ta=25 Per Leg) CHARACTERISTIC
Drain-to Source Breakdown Voltage Gate to Source Voltage
Continuous Drain Current
Isolation Voltage Junction Temperature Storage Temperature Weight of Module Terminal Connection Torque(M4) Terminal Connection Torque(M6)
@TC=25 @TC=100 AC @ 1 minute
2014. 1. 09
Revision No : 0
SYMBOL VDSS VGS
IC
VISO Tj Tstg
Weight M M
RATING 100 15 876 540 2500
-40 ~ 150 -40 ~ 125
98 5 2 5
UNIT V V A V
g Nm Nm
1/1
FMMT311
ELECTRICAL CHARACTERISTICS (@Ta=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Drain to Source ON Resistance Dynamic
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=5mA, Referenced to 25
Vth VDS=VGS, ID=250
VDS=100V, VGS=0V IDSS
VDS=100V, VGS=0V, Tj=125
VGS=15V, with protection circuit IGSS
VGS=-15V, with prote...
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