1000PT

SEMICONDUCTOR RRooHHSS Instantaneous on-state voltage , V Max. On-state dissipation , W SEMICONDUCTOR Fig. 1 Peak on-state voltage Vs. Peak on-state Current 3 2.5 2 Tj = 125 C 1.5 1 0.5 100 1000 10000 Instantaneous on-state current , A Fig. 3 Max. Power Dissipation Vs. Mean on-state Current 2500 2000 1500 1000 0 180 Conduction Angle 60 30 120 90 180 500 0 0 200 400 600 800 1000 1200 Mean on-state current , A Fig. 5 2000 1600 Max. Power Dissipation Vs. Mean on-state Current DC 360 270 180 1200 Conduction Angl1e20 90 60 800 30 400 0 0 300 600 900 1200 1500 Mean on-state current , A Case temperature , C Case temperature , C Transient thermal impedance , C / W 1000PT Series RRooHHSS Fig. 2 Max. Junction to heatsink thermal impedance Vs. Time 0.03 0.02 0.01 0 0.001 0.01 0.1 Time , S 1 10 Fig. 4 Max. heatsink Temperature Vs. Mean on-state Current 140 120 0 180 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 200 400 600 800 1000 1200 1400 Mean on-state current , A Fig. 6 Max. heatsink Temperature Vs. Mean on-state Current 140 360 120 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 270 DDC 500 1000 1500 2000 Mean on-state current , A 2500 Max. On-state dissipation , W www.nellsemi.com Page 2 of 2 ...