Ultrafast Soft Recovery Diode
SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
FRED Ultrafast Soft Recovery Diode
30A / 1200V
FEATURES...
Description
SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
FRED Ultrafast Soft Recovery Diode
30A / 1200V
FEATURES
Ultrafast recovery 150°C operating junction temperature Designed and qualified for industrial level Compliant to RoHS Planar FRED Chip
BENEFITS
Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count
30EPU12
30APU12
Cathode to base
2
Cathode to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
1 Cathode
3 Anode
TO-247AC modified
PRODUCT SUMMARY
trr IF(AV)
VR
1 Anode
3 Anode
TO-247AB
36 ns 30 A 1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Operating junction and storage temperatures
SYMBOL VR lF(AV) lFSM
Tj, TStg
TEST CONDITIONS
TC = 100 °C TC = 25 °C
VALUES 1200 30 280
- 55 to 150
UNITS V A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage
VBR lR = 100µA
1200
lF = 30A
-
Forward voltage
VF lF = 60A
-
lF = 30A, TJ = 125°C
-
Reverse leakage current
lR VR = VR rated TJ = 150°C, VR = VR rated
-
Junction capacitance Series i...
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