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30EPU12

nELL

Ultrafast Soft Recovery Diode

SEMICONDUCTOR 30EPU12 Series RRooHHSS Nell High Power Products FRED Ultrafast Soft Recovery Diode 30A / 1200V FEATURES...


nELL

30EPU12

File Download Download 30EPU12 Datasheet


Description
SEMICONDUCTOR 30EPU12 Series RRooHHSS Nell High Power Products FRED Ultrafast Soft Recovery Diode 30A / 1200V FEATURES Ultrafast recovery 150°C operating junction temperature Designed and qualified for industrial level Compliant to RoHS Planar FRED Chip BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count 30EPU12 30APU12 Cathode to base 2 Cathode to base 2 DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 1 Cathode 3 Anode TO-247AC modified PRODUCT SUMMARY trr IF(AV) VR 1 Anode 3 Anode TO-247AB 36 ns 30 A 1200 V ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Operating junction and storage temperatures SYMBOL VR lF(AV) lFSM Tj, TStg TEST CONDITIONS TC = 100 °C TC = 25 °C VALUES 1200 30 280 - 55 to 150 UNITS V A °C ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. Breakdown voltage VBR lR = 100µA 1200 lF = 30A - Forward voltage VF lF = 60A - lF = 30A, TJ = 125°C - Reverse leakage current lR VR = VR rated TJ = 150°C, VR = VR rated - Junction capacitance Series i...




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