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40FD Dataheets PDF



Part Number 40FD
Manufacturers nELL
Logo nELL
Description Fast Recovery Diodes
Datasheet 40FD Datasheet40FD Datasheet (PDF)

SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products Fast Recovery Diodes (Stud Version), 40A FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode and stud anode versions Voltage up to 1200 VRRM Compliant to RoHS TYPICAL APPLICATIONS DC power supplies lnverters Converters Choppers Ultrasonic systems Freewheeling diodes PRODUCT SUMMARY IF(AV) 40A DO-203AB(DO-5) Available RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERIST.

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SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products Fast Recovery Diodes (Stud Version), 40A FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode and stud anode versions Voltage up to 1200 VRRM Compliant to RoHS TYPICAL APPLICATIONS DC power supplies lnverters Converters Choppers Ultrasonic systems Freewheeling diodes PRODUCT SUMMARY IF(AV) 40A DO-203AB(DO-5) Available RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) IFSM I2t I2√t VRRM trr TJ Maximum TC 50 HZ 60 HZ 50 HZ 60 HZ Range Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE VOLTAGE NUMBER CODE 40FD(R) 02 04 06 08 VRRM, MAXIMUM PEAK REPETITIVE REVERSE VOLTAGE TJ = -40°C TO 125°C V 200 400 600 800 10 1000 12 1200 40FD(R) 40 85 475 500 1128 1038 11281 200 to 1200 See Recovery Characteristics table -40 to 125 UNIT A ºC A A2s I2√s V ns ºC VRSM, MAXIMUM PEAK NON-REPETITIVE REVERSE VOLTAGE TJ = 25°C TO 125°C V 300 500 700 900 1100 1300 IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA TJ = 25°C TJ = 125°C 0.1 10 www.nellsemi.com Page 1 of 6 SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at maximum case temperature Maximum RMS forward current Maximum peak repetitive forward current Maximum peak, one-cycle non-reptitive surge current Maximum l²t for fusing SYMBOL TEST CONDITIONS IF(AV) 180° conduction, half sine wave IF(RMS) IFRM IFSM I2t Sinusoidal half wave, 30° conduction t = 10ms Sinusoidal half wave, 100% VRRM t = 8.3ms reapplied, initial TJ =TJ maximum t = 10ms Sinusoidal half wave, no voltage t = 8.3ms reapplied, initial TJ =TJ maximum t = 10ms 100% VRRM reapplied, t = 8.3ms initial TJ =TJ maximum t = 10ms no voltage reapplied, t = 8.3ms initial TJ =TJ maximum Maximum l²√t for fusing(1) I2√t t = 0.1 ms to 10 ms, no voltage reapplied Maximum value of threshold voltage Maximum value of forward slope resistance Maximum forward voltage drop VF(TO) rF VFM TJ = 125°C TJ = 25°C; lFM = 125A Note : (1) l2t for time tx =I2√t √tx 40FD(R) 40 85 63 220 400 420 475 500 800 732 1128 1038 11281 1.081 6.33 1.95 UNIT A ºC A A A A2s A2√s V mΩ V SWITCHING PARAMETER SYMBOL TEST CONDITIONS Typical reverse recovery time trr Typical reverse recovered charge Qrr TJ = 25°C, IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT) TJ = 25°C, IF = 1A to VR = 30V, -dlF/dt = 100 A/µs TJ = 25°C, -dlF/dt = 25 A/µs, lFM = π x rated lF(AV) TJ = 25°C, IF = 1A to VR = 30V, -dlF/dt = 100 A/µs TJ = 25°C, -dlF/dt = 25 A/µs, lFM = π x rated lF(AV) 40FD(R) 02 to 06 08 to 12 200 500 UNIT 70 180 ns 200 500 160 750 240 1300 nC www.nellsemi.com Page 2 of 6 SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products THERMAL AND MECHANICAL SPECIFCATIONS PARAMETER SYMBOL TEST CONDITIONS 40FD(R) UNITS Maximum junction operating temperature range Maximum storage temperature range TJ Tstg -40 to125 - 40 to150 ºC Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Maximum allowable mounting torque (+0%, -10%) Approximate weight Case style RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not lubricated threads, tighting on nut(1) Lubricated thread, tighting on nut (1) Not lubricated threads, tighting on hexagon(2) Lubricated thread, tighting on hexagon(2) JEDEC 0.60 0.25 K/W 3.4(30) 2.3(20) 4.2(37) N·m (lbf · in) 3.2(28) 25 g 0.88 oz. DO-203AB (DO-5) Note : (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks RthJC CONDUCTION CONDUCTION ANGEL 40FD(R) SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 120˚ 60˚ 30˚ 0.14 0.15 0.31 0.52 0.03 0.14 0.30 0.50 Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC TEST CONDUCTIONS UNITS TJ = 150°C K/W ORDERING INFORMATION SCHEME Current 40 = 40A Diode type FD = Fast Recovery Diode Polarity R = Reverse, Anode on Stud None = standard, Cathode on Stud Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V Trr value A = 200 ns Max. B = 500 ns Max. 40 FD R 06 A www.nellsemi.com Page 3 of 6 SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products Fig.1 Reverse recovery time test waveform lF lFM dlF dt trr t 1/4 lRM(REC) lRM(REC) QRR lF lF,lFM = Peak forward current prior to commutation dlF/dt = Rate of fall of forward current lRM(REC) = Peak reverse recovery current trr = Reverse recovery time QRR = Reverse recovered charge Maximum average forward power loss (W) Fig.2 Current rating nomogram (Sinusoidal Waveforms) 70 40 FD( R) Se ries TJ = 125°C 60 ø = 180° 120° 90° 50 60° 30° 40 RMS Limit 30 20 = 0.3-▲R K/W R t0h.S05A.-7▲-R▲R 1 .0 -▲R 1 .5 -▲R 2 .0 -▲R 3-▲R 4-▲R 5-▲R 180° 0.14 120° 0.15 90° 0.20 ▲R Conduction angle ø K/W 10 Conduction Angle 60° 0.31 0 30° 0.52 0 5 10 15 20 25 30 35 40 10 20 30 40 50 60 70 8.


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