40PT SCRs Datasheet

40PT Datasheet, PDF, Equivalent


Part Number

40PT

Description

Stansard SCRs

Manufacture

nELL

Total Page 5 Pages
Datasheet
Download 40PT Datasheet


40PT
SEMICONDUCTOR
40PT Series RRooHHSS
Stansard SCRs, 40A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
40
600 to 1600
4 to 60
Unit
A
V
mA
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A
K AG
KA G
TO-220AB (non-Insulated) TO-220AB (lnsulated)
(40PTxxA)
(40PTxxAI)
A
KA G
TO-3P (non-Insulated)
(40PTxxB)
A
K AG
TO-3P (Insulated)
(40PTxxBI)
KA
G
TO-263 (D2PAK)
(40PTxxH)
K AG
2(A)
TO-247AB (non-Insulated)
3(G)
(40PTxxC)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
IT(AV)
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
ITSM
I2t
F =50 Hz
F =60 Hz
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
dI/dt F = 60 Hz
IGM
PGM
PG(AV)
VDRM
VRRM
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Storage temperature range
Tstg
Operating junction temperature range
Tj
Maximum peak reverse gate voltage VRGM
Tc=95°C
Tc=90°C
Tc=80°C
Tc=95°C
Tc=90°C
Tc=80°C
t = 20 ms
t = 16.7 ms
Tj = 125ºC
Tj = 125ºC
Tj = 125ºC
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Page 1 of 5
VALUE
40
25
460
480
1058
50
4
10
1
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
V

40PT
SEMICONDUCTOR
40PT Series RRooHHSS
ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified)
SYMBOL
TEST CONDITIONS
40PT06XX 40PT10XX
40PT16XX
40PT08XX 40PT12XX
Unit
IGT
VD = 12V, RL = 33Ω
VGT
Min.
Max.
Max.
4 15 30
30 40 60
1.3
mA
V
VGD VD = VDRM, RL = 3.3KΩ, RGK = 220Ω
Tj = 125°C
Min.
0.2 V
IH IT = 500mA, Gate open
IL IG = 1.2×IGT
Max.
Max.
60
80 100
mA
80 100 150 mA
dV/dt
VD = 67% VDRM, Gate open
Tj = 125°C
Min.
700 1000 1000 V/µs
VTM IT = 80A, tP = 380µs
Tj = 25°C
Max.
1.6
V
IDRM
VD=VDRM, VR=VRRM
Tj = 25°C
Max.
10 µA
IRRM
RGK = 220Ω
Tj = 125°C
Max.
4 mA
Vto Threshold Voltage
Tj = 125°C
Max.
0.85
V
Rd Dynamic Resistance
Tj = 125°C
Max.
10 mΩ
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
S=Copper surface under tab
PRODUCT SELECTOR
PART NUMBER
40PTxxA/40PTxxAl
40PTxxH
40PTxxB/40PTxxBI
40PTxxC
600 V
V
V
V
V
Parameter
D2PAK/TO-220AB/TO-3P/TO-247AB
TO-220AB insulated/TO-3P insulated
S = 1 cm2 TO-263(D2PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
VALUE
0.8
0.9
45
60
50
UNIT
°C/W
°C/W
VOLTAGE (x x)
800 V 1000 V 1200 V 1600 V
VV
VV
VV
VV
VV
VV
VV
VV
SENSITIVITY
35 mA
35 mA
35 mA
35 mA
PACKAGE
TO-220AB
D2PAK
TO-3P
TO-247AB
ORDERING INFORMATION
ORDERING TYPE
MARKING
40PTxxA
40PTxxA
40PTxxAI
40PTxxAI
40PTxxH
40PTxxH
40PTxxB
40PTxxB
40PTxxBI
40PTxxBI
40PTxxC
40PTxxC
Note: xx = voltage
www.nellsemi.com
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D2PAK)
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
2.0g
2.3g
2.0g
4.3g
4.8g
5g
Page 2 of 5
BASE Q,TY
50
50
50
30
30
30
DELIVERY MODE
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Features SEMICONDUCTOR 40PT Series RRooHHSS Stan sard SCRs, 40A Main Features Symbol IT (RMS) VDRM/VRRM IGT Value 40 600 to 16 00 4 to 60 Unit A V mA DESCRIPTION Th e 40PT series of silicon controlled rec tifiers are high performance glass pass ivated technology, and are suitable for general purpose applications, where in -rush current conditions are critical s uch as overvoltage crowbar protection c ircuits in power supplies, in-rush curr ent limiting circuits, solid state rela y in back to back configuration, weldin g equipment and high power motor contro l. Base on a clip assembly technology, they offer a superior performance in su rge current capabilities. A K AG KA G TO-220AB (non-Insulated) TO-220AB (l nsulated) (40PTxxA) (40PTxxAI) A KA G TO-3P (non-Insulated) (40PTxxB) A K AG TO-3P (Insulated) (40PTxxBI) KA G TO-263 (D2PAK) (40PTxxH) K AG 2(A) T O-247AB (non-Insulated) 3(G) (40PTxxC ) 1(K) ABSOLUTE MAXIMUM RATINGS PARA METER SYMBOL TEST CONDITIONS RMS on-state current full sine .
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