N-CHANNEL MOSFET
N N- CHANNEL MOSFET
R
JCS20N60FH
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
20 A 600 V 0.39Ω 50nC
z z z UP...
Description
N N- CHANNEL MOSFET
R
JCS20N60FH
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
20 A 600 V 0.39Ω 50nC
z z z UPS
APPLICATIONS
z High efficiency switch mode power supplies
z Electronic lamp ballasts based on half bridge
z UPS
z z Crss ( 85pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 85pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
Package
ORDER MESSAGE
Order codes
JCS20N60FH-O-F-N-B JCS20N60FH-R-F-N-B
Marking
JCS20N60FH JCS20N60FH
Package
TO-220MF TO-220MF
Halogen Free
NO YES
Packaging Device Weight
Tube 2.20 g(typ) Tube 2.20 g(typ)
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R JCS20N60FH
ABSOLUTE RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage
Symbol VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current -pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current (note 1)
IAR
( 1) Repetitive Avalanche Current (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
Value
600 20.0* 12.5* 20*
±30
450
20.0
20.7
50
55.0 0.31 -55~+150
300
Unit V A A A V mJ A mJ V/ns
W W/℃
℃
℃
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R JCS20N60FH
ELECTRICAL CHARACTERISTIC
Parameter Off –Characteristics - Drain-Source Voltage Break...
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