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JCS20N60FH

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N N- CHANNEL MOSFET R JCS20N60FH MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 20 A 600 V 0.39Ω 50nC z z z UP...


JILIN SINO-MICROELECTRONICS

JCS20N60FH

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N N- CHANNEL MOSFET R JCS20N60FH MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 20 A 600 V 0.39Ω 50nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 85pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 85pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS20N60FH-O-F-N-B JCS20N60FH-R-F-N-B Marking JCS20N60FH JCS20N60FH Package TO-220MF TO-220MF Halogen Free NO YES Packaging Device Weight Tube 2.20 g(typ) Tube 2.20 g(typ) :201112B 1/8 R JCS20N60FH ABSOLUTE RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current -pulse (note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current (note 1) IAR ( 1) Repetitive Avalanche Current (note 1) EAR ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature Value 600 20.0* 12.5* 20* ±30 450 20.0 20.7 50 55.0 0.31 -55~+150 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201112B 2/8 R JCS20N60FH ELECTRICAL CHARACTERISTIC Parameter Off –Characteristics - Drain-Source Voltage Break...




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