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JCS15N65H

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson(Vgs=10V) 0.6 Ω Qg 36 nC Package  ...


JILIN SINO-MICROELECTRONICS

JCS15N65H

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N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson(Vgs=10V) 0.6 Ω Qg 36 nC Package    LED APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies  Crss ( 10pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 10pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS15N65FH-O-F-N-B JCS15N65FH Package Halogen Free Packaging TO-220MF NO Tube Device Weight 2.20 g(typ) :201505A 1/19 R ABSOLUTE RATINGS (Tc=25℃) JCS15N65H Parameter Symbol - Drain-Source Voltage VDSS Drain ID T=25℃ Current-continuous T=100℃ ( 1) Drain Current – pulse IDM (note 1) Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche EAS Energy(note 2) ( 1) Avalanche Current(note IAR 1) ( 1) Repetitive Avalanche Current (note 1) EAR ( 3) Peak Diode Recovery dv/dt dv/dt (note 3) Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range T ,TJ STGB B Value JCS15N65FH 650 15* 9.5* 60.0* ±30 61 15 4.0 9.8 61.6 0.49 -55~+150 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ * *Drain current limited by maximum junction temperature :201505A 2/9 R JCS15N65H ELECTRICAL CHARACTERISTICS Parameter Off –Characteristics Symbol Tests conditions Min Typ Max Units - Drain-Source Voltage BVDSS I DB =250μA, B VBGSB=0V 650 - ...




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