N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS10N70H
MAIN CHARACTERISTICS
Package
ID 10A VDSS 700 V Rdson(@Vgs=10V) 1.10 Ω Qg 55.0nC
z...
Description
N R N-CHANNEL MOSFET
JCS10N70H
MAIN CHARACTERISTICS
Package
ID 10A VDSS 700 V Rdson(@Vgs=10V) 1.10 Ω Qg 55.0nC
z z z UPS
APPLICATIONS z High frequency switch
mode power supply z Electronic ballasts z UPS
z z Crss ( 10pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
JCS10N70CH JCS10N70FH
Marking
JCS10N70CH JCS10N70FH
Package
TO-220C TO-220MF
Halogen
Free NO NO
Packaging
Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS10N70H
Parameter
- Drain-Source Voltage
Drain Current -continuous
( 1)
Drain Current - pulse
(note 1)
Gate-Source Voltage
( 2)
Single Pulsed Avalanche Energy(note
2)
( 1)
Avalanche Current(note 1)
( 1)
Repetitive Avalanche Energy(note 1)
Symbol
VDSS ID T=25℃ T=100℃ IDM
VGSS
EAS
IAR
EAR
Value
JCS10N70CH JCS10N70FH
700 700 10 10* 6.3 6.3*
40 40*
±30
338
10
23.9
( 3) Peak Diode Recovery dv/dt(note 3)
dv/dt
5
Power Dissipation
PD TC=25℃ -Derate above 25℃
245 2.0
80 2.16
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
*
*Drain current limited by maximum junction temperature
Unit V A A A V
mJ
A mJ V/ns
W
W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS10N70H
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off...
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