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JCS7N80CH Dataheets PDF



Part Number JCS7N80CH
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS7N80CH DatasheetJCS7N80CH Datasheet (PDF)

N R N-CHANNEL MOSFET JCS7N80H MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 7A 800 V 1.8Ω (MAX) 39.2nC( Typ.)   APPLICATIONS  Switched mode power suppliesy  Electronic ballast   Crss ( 13pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes JCS7N80CH-O-C-N-B JCS7N80FH-O-F-N-B Marking JCS7N80CH JCS7N80FH Package TO-220C TO-220MF Ha.

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N R N-CHANNEL MOSFET JCS7N80H MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 7A 800 V 1.8Ω (MAX) 39.2nC( Typ.)   APPLICATIONS  Switched mode power suppliesy  Electronic ballast   Crss ( 13pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes JCS7N80CH-O-C-N-B JCS7N80FH-O-F-N-B Marking JCS7N80CH JCS7N80FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) :201304A 1/14 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value - Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current - pulse (note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) EAS IAR ( 1) Repetitive Avalanche Energy (note 1) EAR ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature TL for Soldering Purposes * *Drain current limited by maximum junction temperature 800 7 4.4 28 ±30 570 7.0 30 4.3 195 1.72 -55~+150 300 JCS7N80H Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201402A 2/10 R ELECTRICAL CHARACTERISTICS JCS7N80H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 800 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.92 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=800V,VGS=0V, TC=25℃ VDS=640V, TC=125℃ - - 5 μA - - 100 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=3.5A - 1.3 1.8 Ω Forward Transconductance gfs VDS = 50V, ID=3.5A(note 4) - 5.5 - S Dynamic Characteristics Input capacitance Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 1288 1700 pF - 129 150 pF Reverse transfer capacitance Crss - 11 14 pF :201402A 3/10 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time td(on) tr VDD=400V,ID=7A,RG=25Ω (note 4,5) Turn-Off delay time td(off) Turn-Off Fall time tf Total Gate Charge Qg VDS =640V , - Gate-Source charge - Gate-Drain charge Qgs Qgd ID=7A VGS =10V (note 4,5) JCS7N80H - 40 80 ns - 105 210 ns - 55 110 ns - 65 130 ns - 39 50 nC - 7.9 - nC - 21 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS - - 7 A ISM - - 28 A Drain-Source Diode Forward Voltage VSD VGS=0V, IS=7A Reverse recovery time trr VGS=0V, IS=7A Reverse recovery charge Qrr dIF/dt=100A/μs THERMAL CHARACTERISTIC (note 4) Parameter Symbol JCS7N80CH Max Thermal Resistance, Junction to Case Rth(j-c) 0.65 Rth(j-A) Thermal Resistance, Junction to Ambient 41 - - 1.4 V - 640 - ns - 6.0 - μC JCS7N80FH 0.78 Unit ℃/W 41 ℃/W : 1: 2:L=0.5mH, IAS=5A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=10.5mH, IAS=5A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature :201402A 4/10 R ELECTRICAL CHARACTERISTICS (curves) JCS7N80H On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics :201402A 5/10 R ELECTRICAL CHARACTERISTICS (curves) JCS7N80H Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve :201402A 6/10 R PACKAGE MECHANICAL DATA IPAK Gf JCS7N80H Unit:mm :201402A 7/10 R PACKAGE MECHANICAL DATA TO-220C JCS7N80H Unit:mm :201402A 8/10 R PACKAGE MECHANICAL DATA TO-220MF JCS7N80H Unit:mm :201402A 9/10 R 1. ,, 。 2., 。 3. ,。 4. JCS7N80H NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics.


JCS7N80H JCS7N80CH JCS7N80FH


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