Document
N R N-CHANNEL MOSFET
JCS7N80H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson(Vgs=10V) Qg
7A 800 V 1.8Ω (MAX) 39.2nC( Typ.)
APPLICATIONS
Switched mode power suppliesy
Electronic ballast
Crss ( 13pF) dv/dt RoHS
FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes JCS7N80CH-O-C-N-B JCS7N80FH-O-F-N-B
Marking JCS7N80CH JCS7N80FH
Package TO-220C TO-220MF
Halogen Free NO NO
Packaging Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1)
Drain Current - pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2)
Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1)
EAS IAR
( 1)
Repetitive Avalanche Energy (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature TL for Soldering Purposes
*
*Drain current limited by maximum junction temperature
800 7 4.4 28
±30 570 7.0 30
4.3
195 1.72 -55~+150
300
JCS7N80H
Unit V A A A V mJ A mJ
V/ns
W W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS7N80H
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
800 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.92 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=800V,VGS=0V, TC=25℃ VDS=640V, TC=125℃
- - 5 μA - - 100 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
3.0 - 5.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=3.5A
- 1.3 1.8 Ω
Forward Transconductance
gfs VDS = 50V, ID=3.5A(note 4) - 5.5 - S
Dynamic Characteristics
Input capacitance Output capacitance
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 1288 1700 pF - 129 150 pF
Reverse transfer capacitance
Crss
- 11 14 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time
td(on) tr
VDD=400V,ID=7A,RG=25Ω (note 4,5)
Turn-Off delay time
td(off)
Turn-Off Fall time
tf
Total Gate Charge Qg
VDS =640V ,
- Gate-Source charge - Gate-Drain charge
Qgs Qgd
ID=7A VGS =10V (note 4,5)
JCS7N80H
- 40 80 ns - 105 210 ns - 55 110 ns - 65 130 ns - 39 50 nC - 7.9 - nC - 21 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
IS - - 7 A ISM - - 28 A
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=7A
Reverse recovery time
trr VGS=0V, IS=7A
Reverse recovery charge
Qrr dIF/dt=100A/μs
THERMAL CHARACTERISTIC
(note 4)
Parameter
Symbol
JCS7N80CH
Max
Thermal Resistance, Junction to Case
Rth(j-c)
0.65
Rth(j-A)
Thermal Resistance, Junction to Ambient
41
- - 1.4 V - 640 - ns - 6.0 - μC
JCS7N80FH 0.78
Unit
℃/W
41 ℃/W
: 1: 2:L=0.5mH, IAS=5A, VDD=50V, RG=25 Ω,
TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS,
TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction
temperature 2:L=10.5mH, IAS=5A, VDD=50V, RG=25 Ω,Starting
TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
JCS7N80H
On-Region Characteristics
Transfer Characteristics
On-Resistance Variation vs. Drain Current and Gate Voltage
Body Diode Forward Voltage Variation vs. Source Current and Temperature
Capacitance Characteristics
Gate Charge Characteristics
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ELECTRICAL CHARACTERISTICS (curves)
JCS7N80H
Breakdown Voltage Variation vs. Temperature
On-Resistance Variation vs. Temperature
Maximum Safe Operating Area
Maximum Drain Current vs. Case Temperature
ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve
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PACKAGE MECHANICAL DATA IPAK Gf
JCS7N80H
Unit:mm
:201402A
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PACKAGE MECHANICAL DATA TO-220C
JCS7N80H
Unit:mm
:201402A
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PACKAGE MECHANICAL DATA TO-220MF
JCS7N80H
Unit:mm
:201402A
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1. ,, 。
2., 。
3. ,。
4.
JCS7N80H
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company.
2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us.
3. Please do not exceed the absolute maximum ratings of the device when circuit designing.
4. Jilin Sino-microelectronics.