N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS6N90H
MAIN ID VDSS Rdson-max (@Vgs=10V) Qg-typ
CHARACTERISTICS 6A 900 V 3.0 Ω
14 nC
Packag...
Description
N R N-CHANNEL MOSFET
JCS6N90H
MAIN ID VDSS Rdson-max (@Vgs=10V) Qg-typ
CHARACTERISTICS 6A 900 V 3.0 Ω
14 nC
Package
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 9pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
TO-262
ORDER MESSAGE
Order codes
Marking
JCS6N90CH-O-C-N-B JCS6N90FH-O-F-N-B JCS6N90BH-O-B-N-B
JCS6N90CH JCS6N90FH JCS6N90BH
Package
TO-220C TO-220MF TO-262
Halogen
Free NO NO NO
Packaging Tube Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ) 1.71 g(typ)
:201510C
1/11
R
ABSOLUTE RATINGS (Tc=25℃)
JCS6N90H
Parameter
Symbol
Value JCS6N90CH/BH
JCS6N90FH
- Drain-Source Voltage
VDSS
900
Drain Current
-continuous
ID T=25℃ T=100℃
6 3.8
6* 3.8*
( 1)
Drain Current - pulse (note 1)
IDM
24
24*
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
650
( 1) Avalanche Current(note 1)
IAR
6
( 1)
Repetitive Avalanche Current EAR (note 1)
16.7
( 3) Peak Diode Recovery dv/dt
dv/dt
4.5
(note 3)
Power Dissipation
PD TC=25℃ -Derate above 25℃
167 1.43
58 0.48
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature TL for Soldering Purposes
300
* *Drain current limited by maximum junction temperature
Unit V A A A V mJ A mJ
V/ns
W W/℃
℃
℃
:201510C
2/11
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