N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS50N06H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
50 A 60 V
23 mΩ
3...
Description
N R N-CHANNEL MOSFET
JCS50N06H
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
50 A 60 V
23 mΩ
34 nC
UPS
APPLICATIONS High frequency switch
mode power supplies UPS
Crss dv/dt RoHS
FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A
JCS50N06CH JCS50N06FH JCS50N06VH JCS50N06RH JCS50N06RH
Package
TO-220C TO-220MF IPAK DPAK DPAK
Halogen
Free NO NO NO NO NO
Packaging
Tube Tube Tube Tube Reel
Device Weight 2.06 g(typ) 2.22 g(typ) 0.35 g(typ) 0.35 g(typ) 0.35 g(typ)
:201510D
1/11
R
ABSOLUTE RATINGS (Tc=25℃)
JCS50N06H
Parameter
Value
Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH Unit
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current – pulse(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy (note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Energy(note EAR 1)
60 50 31.7
200* ±20
500
50
8.75 10.3
50* 31.7*
V A A A
V
mJ
A
5.6 mJ
( 3)
dv/dt
Peak Diode Recovery dv/d(t note 3)
7.0 V/ns
Power Dissipation
PD TC=25℃ -Derate
above 25℃
87.5 0.70
Operating and Storage Temperature TJ,TSTG Range
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction tempera...
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