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JCS50N06H

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ 50 A 60 V 23 mΩ 3...


JILIN SINO-MICROELECTRONICS

JCS50N06H

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATIONS  High frequency switch mode power supplies  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A JCS50N06CH JCS50N06FH JCS50N06VH JCS50N06RH JCS50N06RH Package TO-220C TO-220MF IPAK DPAK DPAK Halogen Free NO NO NO NO NO Packaging Tube Tube Tube Tube Reel Device Weight 2.06 g(typ) 2.22 g(typ) 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) :201510D 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS50N06H Parameter Value Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH Unit - Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse(note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy (note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) Repetitive Avalanche Energy(note EAR 1) 60 50 31.7 200* ±20 500 50 8.75 10.3 50* 31.7* V A A A V mJ A 5.6 mJ ( 3) dv/dt Peak Diode Recovery dv/d(t note 3) 7.0 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 87.5 0.70 Operating and Storage Temperature TJ,TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction tempera...




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