JCS55N06CH

N R N-CHANNEL MOSFET JCS55N06CH MAIN CHARACTERISTICS Package ID 55 A VDSS 60 V Rdson（@Vgs=10V） 18 mΩ Qg 43nc  UPS APPLICATIONS  High frequency switch mode power supplies  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package JCS55N06CH-O-C-N-B JCS55N06CH TO-220C Halogen Free NO Packaging Tube Device Weight 2.15 g(typ) ：201504A 1/8 R ABSOLUTE RATINGS (Tc=25℃) JCS55N06CH Parameter Symbol Value JCS55N06CH － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse（note 1） IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy （note 2） EAS ( 1) Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy（note EAR 1） 60 55 39 220 ±20 350 50 12 ( 3) dv/dt Peak Diode Recovery dv/dt（note 3） 7 Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ，TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 103.8 0.83 -55～+175 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201504A 2/8 R ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V, TC=25℃ VDS=48V, TC=125℃ Gate-body leakage current, forw...