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JCS540T

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS540T MAIN CHARACTERISTICS Package ID 33 A VDSS 100 V Rdson(@Vgs=10V) 44 mΩ Qg 37.0 nC z ...


JILIN SINO-MICROELECTRONICS

JCS540T

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Description
N R N-CHANNEL MOSFET JCS540T MAIN CHARACTERISTICS Package ID 33 A VDSS 100 V Rdson(@Vgs=10V) 44 mΩ Qg 37.0 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 71pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 71pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS540CT-O-C-N-B JCS540FT-O-F-N-B JCS540BT-O-B-N-B JCS540ST-O-S-N-B JCS540ST-O-S-N-B JCS540WT-O-W-N-B Marking JCS540CT JCS540FT JCS540BT JCS540ST JCS540ST JCS540WT Package TO-220C TO-220MF TO-262 TO-263 TO-263 TO-247 Halogen Free NO NO NO NO NO NO Packaging Tube Tube Tube Tube Reel Tube Device Weight 2.15 g(typ) 2.20 g(typ) 1.71 g(typ) 1.37 g(typ) 1.37 g(typ) 5.20 g(typ) :201505C 1/13 R JCS540T ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol - Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current - pulse (note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) Repetitive Avalanche Current(note 1) EAR Value JCS540CT/BT JCS540FT /ST/WT 100 100 33 33* 23 23* 132 132* ±30 800 33 13 ( 3) Peak Diode Recovery dv/dt(note 3) dv/dt 5.9 Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain ...




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