N-CHANNEL MOSFET
N N-CHANNEL MOSFET
R
JCS80N10F
MAIN CHARACTERISTICS
ID 80 A VDSS 100 V Rdson(@Vgs=10V) 12 mΩ Qg 115nC
Package
z ...
Description
N N-CHANNEL MOSFET
R
JCS80N10F
MAIN CHARACTERISTICS
ID 80 A VDSS 100 V Rdson(@Vgs=10V) 12 mΩ Qg 115nC
Package
z
DC/DC z D
APPLICATIONS z High efficiency switching
DC/DC converters and switch mode power supply z DC Motor control and Class D Amplifier
z z Crss z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
JCS80N10CF-O-C-N-B JCS80N10FF-O-F-N-B JCS80N10SF-O-S-N-A JCS80N10SF-O-S-N-B JCS80N10WF-O-W-N-B
Marking
JCS80N10CF JCS80N10FF JCS80N10SF JCS80N10SF JCS80N10WF
Package
TO-220C TO-220MF TO-263 TO-263 TO-247
Halogen Free Packaging
NO NO NO NO NO
Tube Tube Reel Tube Tube
Device Weight 2.15 g(typ) 2.2 g(typ) 1.37 g(typ) 1.37 g(typ) 5.2 g(typ)
:201412A
1/11
R
ABSOLUTE RATINGS (Tc=25℃)
JCS80N10F
Parameter
Symbol
- Drain-Source Voltage
VDSSB B
Drain Current-continuous
IDB
T=25℃
B
T=100℃
( 1) Drain Current – pulse(note 1)
IDMB B
Gate-Source Voltage
VGSSB B
( 2) Single Pulsed Avalanche Energy(note 2)
EASB B
( 1) Avalanche Current(note 1)
IARB B
( 1) Repetitive Avalanche Energy (note 1)
EARB B
( 3) Peak Diode Recovery Dv/dt (note 3)
dv/dt
Power Dissipation
P T =25D CB B B B ℃ -Derate above 25℃
Operating and StorageTemperature Range
T ,TJ STGB B
BB
Maximum LeadTemperature for Soldering Purposes
TLB B
* *Drain current limited by maximum junction temperature
Value
JCS80N10C JCS80N
F/SF/W...
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