DatasheetsPDF.com

JCS80N10SF

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson(@Vgs=10V) 12 mΩ Qg 115nC Package z ...


JILIN SINO-MICROELECTRONICS

JCS80N10SF

File Download Download JCS80N10SF Datasheet


Description
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson(@Vgs=10V) 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS z High efficiency switching DC/DC converters and switch mode power supply z DC Motor control and Class D Amplifier z z Crss z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS80N10CF-O-C-N-B JCS80N10FF-O-F-N-B JCS80N10SF-O-S-N-A JCS80N10SF-O-S-N-B JCS80N10WF-O-W-N-B Marking JCS80N10CF JCS80N10FF JCS80N10SF JCS80N10SF JCS80N10WF Package TO-220C TO-220MF TO-263 TO-263 TO-247 Halogen Free Packaging NO NO NO NO NO Tube Tube Reel Tube Tube Device Weight 2.15 g(typ) 2.2 g(typ) 1.37 g(typ) 1.37 g(typ) 5.2 g(typ) :201412A 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS80N10F Parameter Symbol - Drain-Source Voltage VDSSB B Drain Current-continuous IDB T=25℃ B T=100℃ ( 1) Drain Current – pulse(note 1) IDMB B Gate-Source Voltage VGSSB B ( 2) Single Pulsed Avalanche Energy(note 2) EASB B ( 1) Avalanche Current(note 1) IARB B ( 1) Repetitive Avalanche Energy (note 1) EARB B ( 3) Peak Diode Recovery Dv/dt (note 3) dv/dt Power Dissipation P T =25D CB B B B ℃ -Derate above 25℃ Operating and StorageTemperature Range T ,TJ STGB B BB Maximum LeadTemperature for Soldering Purposes TLB B * *Drain current limited by maximum junction temperature Value JCS80N10C JCS80N F/SF/W...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)