Document
N N- CHANNEL MOSFET
R
JCS640H
MAIN CHARACTERISTICS
ID 18A
VDSS
200 V
Rdson-max (@Vgs=10V)
0.15Ω
Qg-typ
27.5nC
Package
UPS
APPLICATIONS
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
UPS
FEATURES
Low gate charge
Crss ( 25pF) Low Crss (typical 25pF )
Fast switching
100% avalanche tested
dv/dt
Improved dv/dt capability
RoHS
RoHS product
ORDER MESSAGE
Order codes
JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B
Marking
JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH
Package Halogen Free Packaging
IPAK DPAK DPAK TO-220C TO-220MF
NO NO NO NO NO
Tube Tube Brede Tube Tube
Device Weight 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) 2.06 g(typ) 2.22 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Value
Parameter - Drain-Source Voltage
Symbol VDSS
JCS640VH/RH/CH 200
Drain Current -continuous
( 1) Drain Current -pulse (note 1) Gate-Source Voltage ( 2)
ID T=25℃ T=100℃
IDM
VGSS
18 16 72
±30
Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current(note 1) IAR
( 1)
259 18
Repetitive Avalanche Current (note 1)
EAR
14
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
5.5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
140 1.12
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering
TL
300
Purposes *
*Drain current limited by maximum junction temperature
JCS640H
JCS640FH
18* 16* 72*
Unit V A A
A
V
mJ
A
4.4 mJ
V/ns 44 W 0.35 W/℃
℃
℃
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ELECTRICAL CHARACTERISTIC
JCS640H
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
200 - V
ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃
- 0.2 - V/℃
IDSS
VDS=200V, VGS=0V, TC=25℃ VDS=160V, TC=125℃
-
- 1 μA - 10 μA
IGSSF VDS=0V, VGS =30V
- - 100 nA
IGSSR VDS=0V, VGS =-30V
- - -100 nA
VGS(th) VDS = VGS , ID=250μA
2.0 - 4.0 V
RDS(ON) VGS =10V , ID=9A
- 0.12 0.15 Ω
gfs
VDS = 40V , ID=9A(note 4) - 14.5 -
S
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 1001 - 173
pF pF
Crss
- 25
pF
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ELECTRICAL CHARACTERISTICS
JCS640H
Parameter
Symbol
Tests conditions
Min Typ Max Units
Switching –Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time
td(on) tr td(off)
VDD=100V,ID=18A,RG=25Ω VGS =10V
(note 4,5)
- 15.2 21 ns - 38.7 54 ns - 46.4 65 ns
Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
tf
Qg VDS =160V , Qgs ID=18A Qgd VGS =10V(note 4,5)
- 12.8 18 ns - 27.5 36 nC - 5.7 - nC - 10.8 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS - - 18 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
- - 72 A
Maximum Continuous Drain-Source VSD Diode Forward Current
VGS=0V, IS=18A
- 1.4 V
Reverse recovery time
trr VGS=0V, IS=18A
Reverse recovery charge
Qrr dIF/dt=100A/μs (note 4)
THERMAL CHARACTERISTIC
224 ns 1.38 μC
Parameter
Symbol
Value
JCS640VH/RH/CH
JCS640FH
Unit
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Rth(j-c) Rth(j-A)
0.89 62.5
2.85
℃/W ℃/W
:
Notes:
1:
1:Pulse width limited by maximum junction temperature
2:L=1.6mH, IAS=18A, VDD=50V, RG=25 Ω,
2:L=1.6mH, IAS=18A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
TJ=25℃
3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4::≤300μs,≤2%
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
5:
5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
JCS640H
Typical Output Characteristics, TC = 25 °C
Transfer Characteristics
100
ID [A]
Breakdown Voltage Variation vs. Temperature
25℃
10
150℃
1 4
Notes: 1.250μs pulse test 2.VDS=40V
6 8 10
VGS [V]
12
Body Diode Forward Voltage Variation vs. Source Current and Temperature
Capacitance [pF]
VGS Gate Source Voltage[V]
Capacitance Characteristics
Gate Charge Characteristics
2.0x103
1.5x103
1.0x103
5.0x102
0.0 100
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Ciss
Coss
Crss
101
V Drain-SourceVoltage[V] DS
12 10 8 6 4 2 0
0
VDS=40V VDS=100V
VDS=160V
10 20
QgToltal Gate Charge [nC]
Notes:
ID=18A
30
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ELECTRICAL CHARACTERISTICS (curves)
JCS640H
On-Resistance Variation vs. Temperature
Maximum Drain Current vs. Case Temperature
20
16
ID Drain Current [A]
12
8
4
0 25 50 75 100 125 150 175
TC Case Temperature [℃]
Maximum Safe Operating Area For JCS640CH/VH.