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JCS640VH Dataheets PDF



Part Number JCS640VH
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS640VH DatasheetJCS640VH Datasheet (PDF)

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC Package    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES  Low gate charge  Crss ( 25pF) Low Crss (typical 25pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capability RoHS RoHS product ORDER MESSAGE Order codes JCS640VH-O-V-N-B JCS640RH-O-R-.

  JCS640VH   JCS640VH


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N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC Package    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES  Low gate charge  Crss ( 25pF) Low Crss (typical 25pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capability RoHS RoHS product ORDER MESSAGE Order codes JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B Marking JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH Package Halogen Free Packaging IPAK DPAK DPAK TO-220C TO-220MF NO NO NO NO NO Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) 2.06 g(typ) 2.22 g(typ) :201510B 1/12 R ABSOLUTE RATINGS (Tc=25℃) Value Parameter - Drain-Source Voltage Symbol VDSS JCS640VH/RH/CH 200 Drain Current -continuous ( 1) Drain Current -pulse (note 1) Gate-Source Voltage ( 2) ID T=25℃ T=100℃ IDM VGSS 18 16 72 ±30 Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) 259 18 Repetitive Avalanche Current (note 1) EAR 14 ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 140 1.12 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering TL 300 Purposes * *Drain current limited by maximum junction temperature JCS640H JCS640FH 18* 16* 72* Unit V A A A V mJ A 4.4 mJ V/ns 44 W 0.35 W/℃ ℃ ℃ :201510B 2/12 R ELECTRICAL CHARACTERISTIC JCS640H Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Symbol Tests conditions Min Typ Max Units BVDSS ID=250μA, VGS=0V 200 - V ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃ - 0.2 - V/℃ IDSS VDS=200V, VGS=0V, TC=25℃ VDS=160V, TC=125℃ - - 1 μA - 10 μA IGSSF VDS=0V, VGS =30V - - 100 nA IGSSR VDS=0V, VGS =-30V - - -100 nA VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V RDS(ON) VGS =10V , ID=9A - 0.12 0.15 Ω gfs VDS = 40V , ID=9A(note 4) - 14.5 - S Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 1001 - 173 pF pF Crss - 25 pF :201510B 3/12 R ELECTRICAL CHARACTERISTICS JCS640H Parameter Symbol Tests conditions Min Typ Max Units Switching –Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time td(on) tr td(off) VDD=100V,ID=18A,RG=25Ω VGS =10V (note 4,5) - 15.2 21 ns - 38.7 54 ns - 46.4 65 ns Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge tf Qg VDS =160V , Qgs ID=18A Qgd VGS =10V(note 4,5) - 12.8 18 ns - 27.5 36 nC - 5.7 - nC - 10.8 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS - - 18 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 72 A Maximum Continuous Drain-Source VSD Diode Forward Current VGS=0V, IS=18A - 1.4 V Reverse recovery time trr VGS=0V, IS=18A Reverse recovery charge Qrr dIF/dt=100A/μs (note 4) THERMAL CHARACTERISTIC 224 ns 1.38 μC Parameter Symbol Value JCS640VH/RH/CH JCS640FH Unit Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rth(j-c) Rth(j-A) 0.89 62.5 2.85 ℃/W ℃/W : Notes: 1: 1:Pulse width limited by maximum junction temperature 2:L=1.6mH, IAS=18A, VDD=50V, RG=25 Ω, 2:L=1.6mH, IAS=18A, VDD=50V, RG=25 Ω,Starting TJ=25℃ TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃ 4::≤300μs,≤2% 4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2% 5: 5:Essentially independent of operating temperature :201510B 4/12 R ELECTRICAL CHARACTERISTICS (curves) JCS640H Typical Output Characteristics, TC = 25 °C Transfer Characteristics 100 ID [A] Breakdown Voltage Variation vs. Temperature 25℃ 10 150℃ 1 4 Notes: 1.250μs pulse test 2.VDS=40V 6 8 10 VGS [V] 12 Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pF] VGS Gate Source Voltage[V] Capacitance Characteristics Gate Charge Characteristics 2.0x103 1.5x103 1.0x103 5.0x102 0.0 100 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Ciss Coss Crss 101 V Drain-SourceVoltage[V] DS 12 10 8 6 4 2 0 0 VDS=40V VDS=100V VDS=160V 10 20 QgToltal Gate Charge [nC] Notes: ID=18A 30 :201510B 5/12 R ELECTRICAL CHARACTERISTICS (curves) JCS640H On-Resistance Variation vs. Temperature Maximum Drain Current vs. Case Temperature 20 16 ID Drain Current [A] 12 8 4 0 25 50 75 100 125 150 175 TC Case Temperature [℃] Maximum Safe Operating Area For JCS640CH/VH.


JCS640H JCS640VH JCS640RH


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