N-CHANNEL MOSFET
R JCS50N20T
JCS50N20T
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
UPS
50A 200 V
50...
Description
R JCS50N20T
JCS50N20T
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
UPS
50A 200 V
50mΩ
90nC
APPLICATIONS High frequency switch
mode power supplies Electronic lamp ballasts
based on half bridge UPS
Crss dv/dt RoHS
FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT
Package
TO-247 TO-3PB
Halogen
Free NO NO
Packaging
Tube Tube
Device Weight 6.1g (typ) 5.14g (typ)
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R JCS50N20T
ABSOLUTE RATINGS (Tc=25℃)
Parameter
- Drain-Source Voltage
Symbol
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current – pulse(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy (note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Energy(note 1)
EAR
( 3) dv/dt Peak Diode Recovery dv/dt(note 3)
Value JCS50N20WT/ABT
200 50 31 200 ±30
1000
50
27.7
Unit V A A A V
mJ
A
mJ
5.4 V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃
Operating and Storage Temperature TJ,TSTG Range
Maximum Lead Temperature for Soldering Purposes
TL
* *Drain current limited by maximum junction temperature
277 2.22 -55~+150
300
W W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS50N20T
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source ...
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