JCS50N20ABT

R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT Package TO-247 TO-3PB Halogen Free NO NO Packaging Tube Tube Device Weight 6.1g (typ) 5.14g (typ) ：201510D 1/9 R JCS50N20T ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse（note 1） IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy （note 2） EAS ( 1) Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy（note 1） EAR ( 3) dv/dt Peak Diode Recovery dv/dt（note 3） Value JCS50N20WT/ABT 200 50 31 200 ±30 1000 50 27.7 Unit V A A A V mJ A mJ 5.4 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ，TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 277 2.22 -55～+150 300 W W/℃ ℃ ℃ ：201510D 2/9 R ELECTRICAL CHARACTERISTICS JCS50N20T Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source ...