JCS65N20T

N R N-CHANNEL MOSFET JCS65N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 65A 200 V 32mΩ 120nC APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS65N20ABT-O-AB-N-B JCS65N20ABT Package TO-3PB Halogen Free NO Packaging Tube Device Weight 5.14g (typ) ：201510C 1/8 R JCS65N20T ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse（note 1） Gate-Source Voltage IDM VGSS ( 2) Single Pulsed Avalanche Energy（note 2） EAS ( 1) Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy（note 1） EAR Value JCS65N20ABT 200 65 42 260 ±30 1056 65 35.7 Unit V A A A V mJ A mJ ( 3) Peak Diode Recovery dv/dt（note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering TL Purposes * *Drain current limited by maximum junction temperature 5.4 357 2.86 -55～+150 300 V/ns W W/℃ ℃ ℃ ：201510C 2/8 R ELECTRICAL CHARACTERISTICS JCS65N20T Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 200 - - V Breakdown Vo...