500mA 8kV HIGH VOLTAGE DIODES
HVGT
ESJC50F08
500mA 8kV HIGH VOLTAGE DIODES
Finds use in applications such as Monitors, Static electricity dust colle...
Description
HVGT
ESJC50F08
500mA 8kV HIGH VOLTAGE DIODES
Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect..
Features
High speed switching High Current High surge resisitivity for CRT discharge High reliability design High Voltage
Applications
X light Power supply Laser Voltage doubler circuit Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark o 7.0
o 1.28
24 min.
21 24 min.
DO-721
Cathode Mark
Type
Mark
ESJC50F08
HVGT ESJC50F08
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature Storage Temperature
Tc Tstg
ESJC50F08 8.0 500 30 120 120
-40 to +125
Units kV mA A peak °C °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1 at 25°C,VR =VRRM
IR2 at 100°C,VR =VRRM
Maximum Reverse Recovery Time
Trr at 25°C
ESJC50F08 14 5.0 50 100
Units V uA uA nS
Junction Capacitance
Cj at 25°C,VR=0V,f=1MHz
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pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2015
...
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