ESJC50F10

HVGT ESJC50F10 500mA 10kV HIGH VOLTAGE DIODES Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect.. Features High speed switching High Current High surge resisitivity for CRT discharge High reliability design High Voltage Applications X light Power supply Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Outline Drawings : mm Lot No. Cathode Mark o 7.0 o 1.28 24 min. 21 24 min. DO-721 Cathode Mark Type Mark ESJC50F10 HVGT ESJC50F10 Items Symbols Condition Repetitive Peak Renerse Voltage V RRM Average Output Current IO Ta=25°C,Resistive Load Suege Current I FSM Junction Temperature Tj Allowable Operation Case Temperature Storage Temperature Tc Tstg ESJC50F10 10 500 30 120 120 -40 to +125 Units kV mA A peak °C °C °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) Maximum Reverse Current IR1 at 25°C,VR =VRRM IR2 at 100°C,VR =VRRM Maximum Reverse Recovery Time Trr at 25°C ESJC50F10 16 5.0 50 100 Units V uA uA nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2015 ...