power MOSFET and IGBT gate drivers
IRS23365DM
Features
• Drives up to six IGBT/MOSFET power devices • Gate drive supplies up to 20 V per channel • Integra...
Description
IRS23365DM
Features
Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel Integrated bootstrap functionality Over-current protection Over-temperature shutdown input Advanced input filter Integrated deadtime protection Shoot-through (cross-conduction) protection Undervoltage lockout for VCC & VBS Enable/disable input and fault reporting Adjustable fault clear timing Separate logic and power grounds 3.3 V input logic compatible Tolerant to negative transient voltage Designed for use with bootstrap power supplies Matched propagation delays for all channels -40°C to 125°C operating range RoHS compliant Lead-Free
Typical Applications
Appliance motor drives Servo drives Micro inverter drives General purpose three phase inverters
Product Summary
Topology VOFFSET VOUT Io+ & I o- (typical) tON & tOFF (typical) Deadtime (typical)
Package Options
3 Phase ≤ 600 V 10 V – 20 V 180 mA & 380 mA 530 ns & 530 ns 275 ns
48-Lead MLPQ7X7 (without 14 leads)
Typical Connection Diagram
1 www.irf.com © 2012 International Rectifier
3 December, 2012
IRS23365DM
Description
The IRS23365DM is a high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three lowside referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the...
Similar Datasheet