PD - 90338E
IRF250
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6766 JANTXV2N6766
THRU-HOLE (TO-20...
PD - 90338E
IRF250
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTORS
JANTX2N6766 JANTXV2N6766
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
200V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF250
200V
RDS(on) 0.085Ω
ID 30A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Stora...