RFN10T2D

Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss Construction Silicon epitaxial planer Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5 Structure Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Limits 200 Direct voltage 200 60Hz half sin wave, Resistance load, Tc=122°C 1/2Io at per diode 10 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C 80 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal Resistance Rth(j-c) * per diode Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 0.90 0.01 15 － Max. 0.98 10 25 2.5 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A RFN10T2D 　 Data Sheet FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 Tj=150°C 1 Tj=125°C 0.1 0.01 Tj=25°C Tj=75°C 0.001 0 500 1000 FORWARD VOLTAGE：VF(mV) VF...