STD19N3LLH6AG

STD19N3LLH6AG Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD19N3LLH6AG Table 1: Device summary Marking Package 19N3LLH6 DPAK Packing Tape and reel October 2015 DocID028432 Rev 2 This is information on a product in full production. 1/15 www.st.com Contents Contents STD19N3LLH6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information.................................