STH6N95K5-2

STH6N95K5-2 N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram D(TAB) G(1) Features Order code VDS RDS(on) max. ID PTOT STH6N95K5-2 950 V 1.25 Ω 6 A 110 W  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(2, 3) Order code STH6N95K5-2 AM15557a.v3 Table 1: Device summary Marking Package 6N95K5 H²PAK-2 Packaging Tape and reel March 2015 DocID027383 Rev 3 This is information on a product in full production. 1/17 www.st.com Contents Contents STH6N95K5-2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 P...