STL11N6F7

STL11N6F7 N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data 1 2 3 4 PowerFLAT™ 3.3x3.3 Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL11N6F7 VDS 60 V RDS(on) max. 12 mΩ ID 11 A Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1234 AM15810v1 Order code STL11N6F7 Marking 11N6F Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel November 2015 DocID028134 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents Contents STL11N6F7 1 Electrical ratings............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curve)........................................................ 5 3 Test circuits ...................................................................................... 7 4 Package mechanical data .......................................................