B679

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature -120 V -5 V -12 A 12 A 100 W 150 ℃ -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A ; VCE= -5V hFE-2 DC Current Gain IC= -7A ; VCE= -5V COB Output Capacitance fT Current-Gain—Bandwidth Product VCB= -10V; ftest= 1MHz IC= -2A ; VCE= -5V MIN TYP. MAX UNIT -120 V -5 V -3.0 V -2.5 V -0.1 mA -0.1 mA 40 140 15 900 pF 6 M...