Document
SEMICONDUCTOR
TECHNICAL DATA
8 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
The KID6508* series are high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display(LED) drivers.
FEATURES Output Current (Single Output) : 500mA Max. High Sustaining Voltage Outputs : 50V Min. Output Clamp Diodes Inputs Compatible With Various Types of Logic. PKG Type, AP : DIP-18Pin, DIP-18(1)Pin PKG Type, AF : FLP-20Pin
TYPE KID65081AP/AF KID65082AP/AF KID65083AP/AF KID65084AP/AF
INPUT BASE RESISTOR External 10.5k +7V Zenner diode 2.7k 10.5k
DESIGNATION General Purpose 14 25V P-MOS TTL, 5V C-MOS 6 15V P-MOS, C-MOS
MAXIMUM RATINGS (Ta=25 , unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING
Output Sustaining Voltage
Output Current
Input Voltage
Input Current
Reverse Voltage Clamp Diode
Forward Current
VCE(SUS) IOUT
VIN (*1) IIN (**2)
VR IF
-0.5 50 500
-0.5 +30 25 50 500
Power Dissipation
AP PD
AF
1.47 0.96
Operating Temperature
Topr -40 85
Storage Temperature
Tstg -55 150
*1 Except KID65081AP/AF, **2Only KID65081AP/AF
UNIT V
mA/ch V mA V mA W W
KID65081AP/AF~ KID65084AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
W
C LG
dD
P
TQ
DIM MILLIMETERS
A
A 25.1MAX B 6.40+_ 0.2
18 10 C 3.50+_ 0.2
D 1.40 +_0.1
B
d 0.50+_ 0.1
G 4.15+_ 0.3
1 9 L 3.30+_ 0.3 P 2.54
T 0.25+0.1/-0.05
W 7.62
Q 0 - 15
DIP-18
W
C LG
dD
P
TQ
DIM MILLIMETERS
A A 23.0+_ 0.2
18
10
B 6.35+_ 0.2 C 3.30+_ 0.2
D 1.52 +_0.1
B
d 0.46+_ 0.1
G 4.05+_ 0.3
1 9 L 3.30+_ 0.3
P 2.54
T 0.25+0.1/-0.05 W 7.75+_ 0.2
Q 0 - 10
DIP-18(1)
G H T
DP A
20 11
1 10
B1 B2
L
DIM A B1 B2 D G H L P T
MILLIMETERS 12.83+_ 0.2 7.49+_ 0.2 10.34+_ 0.3 0.4 +_ 0.1
0.20+0.1/-0.05 2.51+_ 0.2 0.65+_ 0.2
1.27
0.27+0.1/-0.05
FLP-20
2009. 12. 16
Revision No : 2
1/7
KID65081AP/AF~KID65084AP/AF
PIN CONNECTION (TOP VIEW) O1 O2 O3 O4 O5 O6 O7 O8 COMMON N.C
20 19 18 17 16 15 14 13 12 11
12345678
9 10
I1 I2 I3 I4 I5 I6 I7 I8 GND N.C
AF-TYPE (FLP-20 PACKAGE)
O1 O2 O3 O4 O5 O6 O7 O8 COMMON
18 17 16 15 14 13 12 11
10
12345678
9
I1 I2 I3 I4 I5 I6 I7 I8 GND
AP-TYPE (DIP-18 PACKAGE)
3kΩ 3kΩ 3kΩ
3kΩ
SCHEMATICS (EACH DRIVER)
INPUT
KID65081AP/AF
COMMON OUTPUT
7.2kΩ
*
*
GND
KID65082AP/AF INPUT 7V
10.5kΩ
* 7.2kΩ
INPUT
KID65083AP/AF 2.7kΩ
* 7.2kΩ
COMMON OUTPUT INPUT
KID65084AP/AF
10.5kΩ
* * 7.2kΩ
GND * : Parasitic Diodes
( (NOTE. The input and output parasitic diodes cannot be used as clamp diodes.
COMMON OUTPUT
*
GND COMMON OUTPUT
*
GND
2009. 12. 16
Revision No : 2
2/7
KID65081AP/AF~KID65084AP/AF
RECOMMENDED OPERATING CONDITIONS (Ta=-40 85 )
CHARACTERISTIC
SYMBOL
CONDITION
Output Sustaining Voltage
Output Current
AP AF
Input Voltage
Except KID65081AP/AF
KIA65082AP/AF
Input Voltage (Output ON)
KID65083AP/AF
KID65084AP/AF
Input Current
Only KID65081AP/AF
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
VCE(SUS) TPW=25ms, Duty=8%, 8 Circuits TPW=25ms, Duty=25%, 8 Circuits
IOUT TPW=25ms, Duty=8%, 8 Circuits TPW=25ms, Duty=25%, 8 Circuits
VIN
VIN(ON)
IIN VR IF
Power Dissipation
AP AF
PD
MIN. TYP. MAX. UNIT
0 - 50 V
0 - 400
0 - 200 mA/ch
0 - 350
0 - 140
0 - 30 V
14 - 30
3.5 - 30
V
8 - 30
- - 5 mA
- - 50 V
- - 400 mA
- - 0.52 W
- - 0.35
2009. 12. 16
Revision No : 2
3/7
KID65081AP/AF~KID65084AP/AF
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise noted)
CHARACTERISTICS
Output Leak Current
KID65082AP/AF KID65084AP/AF
Collector-Emitter Saturation Voltage
Input Current
KID65082AP/AF KID65083AP/AF
KID65084AP/AF
Input Voltage (Output On)
KID65082AP/AF KID65083AP/AF
KID65084AP/AF
DC Current Transfer Ratio
TEST SYMBOL
CIRCUIT
TEST CONDITION
VCE=50V, Ta=25
VCE=50V, Ta=85
ICEX
1
VCE=50V, VIN=6V
VCE=50V, VIN=1V
IOUT=350mA, IIN=500 A
VCE(sat)
2 IOUT=200mA, IIN=350 A
IOUT=100mA, IIN=250 A
VIN=17V
IIN(ON)
VIN=3.85V 3
VIN=5V
VIN=12V
IIN(OFF)
4 IOUT=500 A, Ta=85
VCE=2V, IOUT=300mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=250mA
VIN(ON)
VCE=2V, IOUT=300mA 5
VCE=2V, IOUT=125mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=275mA
VCE=2V, IOUT=350mA
hFE 2 VCE=2V, IOUT=350mA
Clamp Diode Reverse Current
Clamp Diode Forward Voltage Input Capacitance Turn-On Delay Turn-Off Delay *1 VR=VR MAX
Ta=25 (*1) IR 6
Ta=85 (*1)
VF 7 IF=350mA
CIN
tON 8 RL=120 , VOUT=50V
tOFF
MIN. TYP. MAX. UNIT
- - 50
- - 100
- - 500
- - 500
- 1.3 1.6
- 1.1 1.3
- 0.9 1.1
- 0.82 1.25
- 0.93 1.35
- 0.35 0.5
- 1.0 1.45
50 65
-
- - 13
- - 2.4
- - 2.7
- - 3.0
- - 5.0
- - 6.0
- - 7.0
- - 8.0
1000 -
-
- - 50
- - 100
- - 2.0
- 15 -
- 0.1 -
- 0.2 -
A V mA A
V
A V pF s
2009. 12. 16
Revision No : 2
4/7
KID65081AP/AF~KID65084AP/AF
TEST CIRCUIT
1. ICEX
OPEN
VIN VIN =0
OPEN
ICEX VCE
2. VCE(sat) , hFE IIN
3. IIN(ON)
IIN(ON) VIN(ON)
OPEN OPEN
4. IIN(OFF) IIN(OFF)
OPEN
IOUT
VCE , VCE(sat) hFE =
IIN IOUT
OPEN
IOUT
5. VIN(ON) VIN(ON)
OPEN VCE
.