C5127

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SC5127 base voltage 2SC5127A VCBO 800 900 Collector to 2SC5127 emitter voltage 2SC5127A VCES 800 900 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCEO VEBO ICP IC IB PC 500 8 3.0 1.5 0.5 25 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C +0.5 13.7–0.2 15.0±0.3 9.9±0.3 φ3.2±0.1 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.2 4.1±0.2 8.0±0.2 Solder Dip 1.2±0.15 1.45±0.15 2.6±0.1 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC5127 current 2SC5127A Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf VCB = 800V, IE = 0 V...