Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed swit...
Power
Transistors
2SC5127, 2SC5127A
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5127 base voltage 2SC5127A
VCBO
800 900
Collector to 2SC5127 emitter voltage 2SC5127A
VCES
800 900
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO VEBO ICP IC IB
PC
500 8 3.0 1.5 0.5 25 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit
V
V
V V A A A
W
˚C ˚C
+0.5
13.7–0.2
15.0±0.3
9.9±0.3 φ3.2±0.1
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.2
4.1±0.2 8.0±0.2 Solder Dip
1.2±0.15 1.45±0.15
2.6±0.1 0.7±0.1
0.75±0.1
2.54±0.2 5.08±0.4
7° 1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC5127
current
2SC5127A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO
IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf
VCB = 800V, IE = 0 V...