C3025

SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC3025 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current ICP Collector current-peak PC Collector power dissipation Tj Junction temperature Tstg Storage temperature TC=25 VALUE 1500 800 6 5 6 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=8 V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A VBE(sat) Base-emitter saturation voltage IC=5A; IB=1.25A ICES Collector cut-off current VCE=1500V; RBE=8 Switching times ts Storage time tf Fall time IC=5A; IB1=1A;IB2=-2.5A Product Specification 2SC3025 MIN TYP. MAX UNIT 800 V 6V 2.0 V 1.5 V 0.5 mA 4.0 µs 0.5 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC3025 Fig.2 outline dimensions...