STGF15H60DF

STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated Ultrafast soft recovery antiparallel diode Applications Motor control UPS, PFC Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF DS9881 - Rev 3 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP (2) Pulsed collector current VGE Gate-emitter voltage Continuous forward current TC = 25 °C IF Continuous forward current at TC = 100 °C IFP (2) Pulsed forward current VISO Insulation withs...