SiHF18N50C

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single TO-220 TO-220 FULLPAK 0.225 D FEATURES Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV/dt Ruggedness Improved trr/Qrr Improved Gate Charge High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC G S D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET TO-220 SiHP18N50C-E3 TO-220 FULLPAK SiHF18N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Linear Derating Factor TO-220 FULLPAK Single Pulse Avalanche Energyc EAS Maximum Power Dissipation TO-220 FULLPAK PD Peak Diode Recovery dV/dtd dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Drain current limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A. d. ISD ≤ 18 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. e. 1.6 mm from case. LIMIT 500 ± 30 18 11 72 1.8 0.3 361 223 38 5 - 55 to + 150 300 UNIT V A W/°C mJ W V/ns °C * Pb containing termina...