Power MOSFET
SiHP18N50C, SiHF18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs...
Description
SiHP18N50C, SiHF18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
560 VGS = 10 V
76 21 29 Single
TO-220
TO-220 FULLPAK
0.225 D
FEATURES Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV/dt Ruggedness Improved trr/Qrr Improved Gate Charge High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC
G
S D G
GDS
ORDERING INFORMATION
Package Lead (Pb)-free
S N-Channel MOSFET
TO-220 SiHP18N50C-E3
TO-220 FULLPAK SiHF18N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb
VGS at 10 V
TC = 25 °C TC = 100 °C
VGS ID IDM
Linear Derating Factor
TO-220 FULLPAK
Single Pulse Avalanche Energyc
EAS
Maximum Power Dissipation
TO-220 FULLPAK
PD
Peak Diode Recovery dV/dtd
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Drain current limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A. d. ISD ≤ 18 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. e. 1.6 mm from case.
LIMIT 500 ± 30 18 11 72 1.8 0.3 361 223 38
5 - 55 to + 150
300
UNIT V
A
W/°C mJ W V/ns °C
* Pb containing termina...
Similar Datasheet