CTLDM7590

CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE: 2 TLM3D6D8 CASE APPLICATIONS: Load/Power Switches Boost/Buck Converters Battery Charging/Power Management FEATURES: ESD protection up to 2kV Power dissipation: 125mW Low rDS(ON) Low threshold voltage Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID ID PD TJ, Tstg ΘJA 20 8.0 140 600 125 -65 to +150 1000 UNITS V V mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=5.0V, VDS=0 IDSS VDS=5.0V, VGS=0 IDSS VDS=16V, VGS=0 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=VGS, ID=250μA 0.4 rDS(ON) VGS=4.5V, ID=100mA 4.0 rDS(ON) VGS=2.5V, ID=50mA 5.5 rDS(ON) VGS=1.8V, ID=20mA 8.0 rDS(ON) VGS=1.5V, ID=10mA 11 rDS(ON) VGS=1.2V, ID=1.0mA 20 Qg(tot) VDS=10V, VGS=4.5V, ID=100mA 0.50 Qgs VDS=10V, VGS=4.5V, ID=100mA 0....